intrinsic semiconductor
英 [ɪnˈtrɪnzɪk ˌsemikənˈdʌktə(r)]
美 [ɪnˈtrɪnzɪk ˈsemikəndʌktər]
本征半导体
双语例句
- This result is useful for understanding the intrinsic nature of the perpendicular semiconductor laser beam.
这一结果有助于认识半导体激光器垂直于结方向上光束的内在本性。 - The ground state Fermi level of the intrinsic semiconductor which can be used to determine the barrier height is different from the intrinsic Fermi level in semiconductor physics.
文中用于确定接触势垒高度的“本征半导体基态费米能级ESF，i”不同于半导体物理中所指的“本征费米能级Ei”。 - Abstract The method used to analyze the noise of electrical amplifier is applied to analyze the intrinsic noise of semiconductor laser diode ( LD). A noise equivalent circuit is established based on the LD large signal circuit model developed by R. S.Tucker.
本文将电子放大器的噪声分析方法用于半导体激光二极管（LD）的本征噪声分析中，在R.S.Tucker的大信号模型的基础上，建立了适应于通用电路分析软件计算的LD噪声等效电路模型。 - Based on the second-order moments, the M 2 factor and the intrinsic astigmatism of the beam from a semiconductor laser are derived and analyzed theoretically.
基于二阶矩定义，对表征半导体激光光束质量和像散特性的光束特征参数M2因子和内禀像散不变量a等作了理论推导和分析。 - Two conduction mechanisms, impurity conduction and intrinsic conduction, are found in semiconductor.
半导体内有两种导电机制：杂质导电和本征导电。 - The intrinsic parameters of l0Gb/ s semiconductor laser are obtained from experimental measurement and simulation. These parameters will be used in solving single mode rate equation of the laser.
通过实验测量和拟合的方法得到10Gb/s半导体激光器内部参数，用于解激光器单模速率方程。 - Extraction of Intrinsic Response of Semiconductor Lasers Using Improved Optical Modulation Technique
光调制技术测量半导体激光器固有高频响应 - The intrinsic electronic transport properties of organic semiconductor are the foundation of theoretical simulation for organic thin film transistors ( OTFTs) and the field-effect experiment is a very important method to study the intrinsic electronic transport properties of organic semiconductor.
有机半导体的电荷传输理论是进行有机薄膜场效应晶体管器件理论模拟的基础，而场效应实验是研究半导体电荷传输机制的重要表征手段。 - Nanoelectronics will overcome the intrinsic restriction of the current semiconductor industry and become one of the most promising candidates who have achieved breakthroughs recently.
纳电子学能够克服现有的半导体工业所固有的限制，逐渐成为最有前景的技术之一，最近已经取得了不少突破。 - As an intrinsic n-type semiconductor material, we can get a higher electron density, low resistivity, while in the visible region can maintain a high transmission rate, if we dope ZnO by donor ( such as Al, Ga, Zr etc.).
作为一种本征n型的半导体材料，ZnO通过施主掺杂（如Al、Ga、Zr等），便可以获得较高的电子浓度，较低的电阻率，而在可见光区域仍能保持较高的透射率。